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OVERVIEW OF GAS-PHASE CHEMISTRY USED FOR PLASMA CHEMICAL ETCHING SI, SIO2 AND SI3N4.
Zapevalin Alexander Ivanovich
Penza State University
Postgraduate of "Instrument making" department
Penza State University
Postgraduate of "Instrument making" department
Abstract
This article reviews the use of gas chemistry for etching Si, SiO2 and Si3N4. The article considers the anisotropy of the etching process in gases CF4, C2F6, C4F8, SF6, CHF3, NF3, Cl2, CCl4, BCl3, Br2, CBr4. The effect of the addition of inert gases and hydrogen on the etching process.
Keywords: anisotropy, anisotropy of the etching process, gas chemistry for etching, RIE
Category: 01.00.00 Physics and mathematics
Article reference:
Overview of gas-phase chemistry used for plasma chemical etching Si, SiO2 and Si3N4. // Modern scientific researches and innovations. 2014. № 6. P. 1 [Electronic journal]. URL: https://web.snauka.ru/en/issues/2014/06/35784
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