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THE CALCULATING THE FET BASED SCHOTTKY HYDRODYNAMIC MODEL
Bagutdinov Ravil Anatolievich1, Narimanov Rinat Kazbekovich2
1Tomsk State University, undergraduate Physics and technology faculty, Last job: Teacher of Informatics at regional state education institution act "Tomsk municipal building College"
2Tomsk State University, PhD in Physics and Mathematical Sciences, Associate Professor, Department of Applied aerodynamics
1Tomsk State University, undergraduate Physics and technology faculty, Last job: Teacher of Informatics at regional state education institution act "Tomsk municipal building College"
2Tomsk State University, PhD in Physics and Mathematical Sciences, Associate Professor, Department of Applied aerodynamics
Abstract
Is this paper were performed parametric studies on the value of the gate potential, allowing determining its impact on the character of the electron transmission. Used two-dimensional hydrodynamic numerical model of GaAs field-effect transistors with a Schottky gate, allows taking into account the effects of the transient dynamics of electrons and exploring the complex phenomena of carrier transport in Schottky field - effect transistor.
Keywords: FET based Schottky, hydrodynamic model
Category: 01.00.00 Physics and mathematics
Article reference:
The calculating the FET based Schottky hydrodynamic model // Modern scientific researches and innovations. 2015. № 3. P. 1 [Electronic journal]. URL: https://web.snauka.ru/en/issues/2015/03/49869
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